View APT30M70BVR_349742.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT30M70BVR
300V 48A 0.070
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
TO-247
* Faster Switching * Lower Leakage
* 100% Avalanche Tested * Popular TO-247 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT30M70BVR UNIT Volts Amps
300 48 192 30 40 370 2.96 -55 to 150 300 48 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, I D = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
300 48 0.070 25 250 100 2 4
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.] )
Ohms A nA Volts
050-5502 Rev C
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (V GS = 30V, VDS = 0V) Gate Threshold Voltage (V DS = VGS , ID = 1.0mA)
APT Website - http://www.advancedpower.com
Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-802 8 Phone: (33) 5 57 92 15 15
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
FAX: (541) 388-036 4 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT30M70BVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT
4890 882 277 152 35 66 14 21 57 10
5870 1235 415 225 52 99 28 42 85 20
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
48 192 1.3 440 5.8
(Body Diode) (VGS = 0V, IS = -ID[Cont.] )
Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/s)
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.34 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.13mH, R = 25, Peak I = 48A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.4 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.2 0.1 0.05
PDM
0.01 0.005
0.02 0.01
Note:
t1 t2
JC
050-5502 Rev C
Z
SINGLE PULSE 0.001 10-5
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT30M70BVR
100 VGS =7V, 10V & 15V I , DRAIN CURRENT (AMPERES) D 6V 80 I , DRAIN CURRENT (AMPERES) D 80 100 VGS =15V V GS=10V VGS=7V 5.5V 6V
60
5.5V
60
40
5V
40
5V
20
4.5V 4V
20
4.5V 4V
0 30 60 90 120 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS (ON), DRAIN-TO-SOURCE ON RESISTANCE 100 TJ = -55C I , DRAIN CURRENT (AMPERES) D 80 TJ = +25C T J = +125C
V DS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ < 0.5 % DUTY CYCLE
0
0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.3
V
GS
0
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
1.2
60
1.1 V GS=10V VGS=20V 1.0
40 TJ = +125C T J = +25C 0 T J = -55C
20
DS
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 50 I , DRAIN CURRENT (AMPERES) D
R
0.9
0
20 40 60 80 100 ID , DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) BV 25
DSS
ID = 0.5 I D [Cont.]
1.20
40
1.15
1.10
30
1.05
20
1.00 0.95
10
50 75 100 125 150 T C, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE (ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
V GS = 10V
0
-25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.90
-50
2.0
1.1 1.0 0.9 0.8 0.7 050-5502 Rev C
1.5
1.0
0.5
DS
0.0 -50
-25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 T C, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
0.6
-50
APT30M70BVR
200 100 ID , DRAIN CURRENT (AMPERES) 50 1mS 10 5 10mS 100mS DC T C =+25C T J =+150C SINGLE PULSE C, CAPACITANCE (pF) 5,000
OPERATION HERE LIMITED BY R DS (ON)
10S 100S
15,000 10,000 Ciss
Coss 1,000 500
C rss
1 .5
.1
1 5 10 50 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
ID = ID [Cont.]
.01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200 100 50 T J =+150C TJ =+25C
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20 VDS =60V VDS =150V 12 V DS=240V 8
16
10 5
1 .5
4
50 100 150 200 250 300 Qg , TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
.1
TO-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Drain Source
2.21 (.087) 2.59 (.102)
050-5502 Rev C
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058

▲Up To Search▲

Price & Availability of APT30M70BVR

	To Download APT30M70BVR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .